Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers
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منابع مشابه
InSb quantum dots for the mid-infrared spectral range grown on GaAs substrates using metamorphic InAs buffer layers
Type II InSb/InAs quantum dots (QDs) were successfully grown on GaAs substrates using three different metamorphic buffer layer (MBL) designs. The structural properties of the resulting metamorphic InAs buffer layers were studied and compared using cross-sectional transmission electron microscopy and high resolution x-ray diffraction measurements. Photoluminescence (PL) originating from the InSb...
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